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| FS30KMJ-06F High-Speed Switching Use Nch Power MOS FET REJ03G0254-0100 Rev.1.00 Aug.20.2004 Features * * * * * Drive voltage : 4 V VDSS : 60 V rDS(ON) (max) : 22 m ID : 30 A Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns Outline TO-220FN 2 1 1. Gate 2. Drain 3. Source 1 2 3 3 Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mass Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso -- Ratings 60 20 30 120 30 30 120 25 - 55 to +150 - 55 to +150 2000 2.0 Unit V V A A A A A W C C V g Conditions VGS = 0 V VDS = 0 V L = 10 H AC 1 minute, Terminal to case Typical value Rev.1.00, Aug.20.2004, page 1 of 6 FS30KMJ-06F Electrical Characteristics (Tch = 25C) Parameter Drain-source breakdown voltage Gate-source breakdown voltage Drain-source leakage current Gate-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) trr Min. 60 20 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 1.5 18 22 0.27 38 2600 385 200 13 45 240 100 1.0 -- 50 Max. -- -- 100 10 2.0 22 28 0.33 -- -- -- -- -- -- -- -- 1.5 5.00 -- Unit V V A A V m m V S pF pF pF ns ns ns ns V C/W ns Test conditions ID = 1 mA, VGS = 0 V IG = 100 A, VDS = 0 V VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V ID = 15 A, VGS = 4 V ID = 15 A, VGS = 10 V ID = 15 A, VDS = 10 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 30 V, ID = 15 A, VGS = 10 V, RGEN = RGS = 50 IS = 15 A, VGS = 0 V Channel to case IS = 30 A, dis/dt = - 100 A/s Rev.1.00, Aug.20.2004, page 2 of 6 FS30KMJ-06F Performance Curves Drain Power Dissipation Derating Curve 50 Maximum Safe Operating Area 3 2 Drain Power Dissipation PD (W) 30 20 10 0 0 Drain Current ID (A) 40 10 7 5 3 2 10 7 5 3 2 2 tw = 10s 1 100s 1ms 10ms DC 50 100 150 200 10 7 Tc = 25C 5 Single Pulse 3 0 3 5 7 10 2 3 0 5 7 10 1 23 5 7 10 2 Case Temperature Tc (C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) 50 3.5V Output Characteristics (Typical) 20 VGS = 10V PD = 25W Drain Current ID (A) Drain Current ID (A) 40 30 20 10 0 0 VGS = 10V 5V 4V Tc = 25C Pulse Test 3V 16 12 8 4 5V 4V 3.5V 3V 2.5V 2.5V PD = 25W Tc = 25C Pulse Test 1.0 2.0 3.0 4.0 5.0 0 0 0.4 0.8 1.2 1.6 2.0 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Drain-Source On-State Resistance rDS(ON) (m) Drain-Source On-State Voltage VDS(ON) (V) On-State Voltage vs. Gate-Source Voltage (Typical) 2.0 1.6 1.2 0.8 0.4 10A ID = 50A Tc = 25C Pulse Test On-State Resistance vs. Drain Current (Typical) 50 40 30 20 10 00 1 2 3 10 2 3 5 710 2 3 5 710 2 3 5 710 VGS = 4V 10V Tc = 25C Pulse Test 30A 0 0 2 4 6 8 10 Gate-Source Voltage VGS (V) Drain Current ID (A) Rev.1.00, Aug.20.2004, page 3 of 6 FS30KMJ-06F Forward Transfer Admittance vs. Drain Current (Typical) Forward Transfer Admittance | yfs | (S) 102 7 5 3 2 10 7 5 3 2 10 0 10 0 1 Transfer Characteristics (Typical) 50 40 30 20 10 0 0 Tc = 25C VDS = 10V Pulse Test Tc = 25C Drain Current ID (A) 75C 125C VDS = 10V Pulse Test 2 4 6 8 10 23 5 7 101 23 5 7 102 Gate-Source Voltage VGS (V) Capacitance vs. Drain-Source Voltage (Typical) 104 7 5 Drain Current ID (A) Switching Characteristics (Typical) 103 7 Tch = 25C, VDD = 30V = 10V, RGEN = RGS = 50 V 5 GS Switching Time (ns) Capacitance (pF) 3 2 103 7 5 3 Tch = 25C 2 f = 1MHz 2 Ciss 3 2 102 7 5 3 2 10 0 10 1 td(off) tf tr Coss Crss VGS = 0V td(on) 10 -1 0 1 2 10 2 3 5 710 2 3 5 710 2 3 5 710 23 5 7 10 1 23 5 7 10 2 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) 10 50 Tch = 25C ID = 30A Source-Drain Diode Forward Characteristics (Typical) VGS = 0V Pulse Test Gate-Source Voltage VGS (V) Source Current IS (A) 8 6 4 2 0 0 40 30 20 10 0 0 Tc = 125C 75C VDS = 10V 20V 40V 25C 20 40 60 80 100 0.4 0.8 1.2 1.6 2.0 Gate Charge Qg (nC) Source-Drain Voltage VSD (V) Rev.1.00, Aug.20.2004, page 4 of 6 FS30KMJ-06F On-State Resistance vs. Channel Temperature (Typical) 10 7 VGS = 10V ID = 15A 5 Pulse Test 3 2 100 7 5 3 2 10-1 -50 0 50 100 150 1 Drain-Source On-State Resistance rDS(ON) (25C) Drain-Source On-State Resistance rDS(ON) (tC) Gate-Source Threshold Voltage VGS(th) (V) Threshold Voltage vs. Channel Temperature (Typical) 4.0 3.2 2.4 1.6 0.8 0 VDS = 10V ID = 1mA -50 0 50 100 150 Channel Temperature Tch (C) Channel Temperature Tch (C) Drain-Source Breakdown Voltage V(BR)DSS (tC) Drain-Source Breakdown Voltage V(BR)DSS (25C) Transient Thermal Impedance Zth(ch-c) (C/W) Breakdown Voltage vs. Channel Temperature (Typical) 1.4 1.2 1.0 0.8 0.6 0.4 VGS = 0V ID = 1mA Transient Thermal Impedance Characteristics 101 7 D = 1.0 5 3 0.5 2 0.2 100 0.1 7 5 3 2 10 -1 0.05 0.02 0.01 Single Pulse PDM tw T 7 5 3 2 -2 D = tw T -50 0 50 100 150 10 10-4 2 3 5 710-3 2 3 5 7 10-2 2 3 5 710-1 2 3 5 7100 2 3 5 7 101 2 3 5 7102 Channel Temperature Tch (C) Pulse Width tw (s) Switching Time Measurement Circuit Vin Monitor D.U.T. RL Vin Vout RGS VDD Vout Monitor Switching Waveform 90% RGEN 10% 10% 10% 90% td(on) tr 90% td(off) tf Rev.1.00, Aug.20.2004, page 5 of 6 FS30KMJ-06F Package Dimensions TO-220FN EIAJ Package Code JEDEC Code Mass (g) (reference value) 2.0 Lead Material Cu alloy 10 0.3 2.8 0.2 15 0.3 3 0.3 3.2 0.2 14 0.5 3.6 0.3 1.1 0.2 1.1 0.2 0.75 0.15 6.5 0.3 0.75 0.15 2.54 0.25 2.54 0.25 4.5 0.2 Symbol A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Standard order code example FS30KMJ-06F FS30KMJ-06F-A8 Straight type Plastic Magazine (Tube) 50 Type name Lead form Plastic Magazine (Tube) 50 Type name - Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page 6 of 6 2.6 0.2 Dimension in Millimeters Min Typ Max Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. 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